preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. july 2006 rev 1 1/9 9 strh100n6fsy3 n-channel 60v - 0.012 ? - to-254aa rad-hard low gate charge stripfet? power mosfet general features exceptional dv/dt capability 100% avalanche tested application oriented characterization hermetically sealed description this power mosfet series realized with stmicroelectronics unique stripfet? process has specifically been designed to improve immunity to space effect. it is therefore suitable as power switch in mainly high-efficiency dc-dc converters. it is also intended for any application with low gate charge drive requirements. applications satellite high reliability internal schematic diagram type v dss strh100n6fsy3 60v to-254aa 1 2 3 www.st.com order codes part number marking package packaging strh100n6fsy1 (1) 1. mil temp range rh100n6fsy1 to-254aa individual strip pack STRH100N6FSY2 (2) 2. mil temp range + burn in rh100n6fsy2 to-254aa individual strip pack strh100n6fsy3 (3) 3. space flights parts (full esa flow screening) rh100n6fsy3 to-254aa individual strip pack
electrical ratings strh100n6fsy3 2/9 1 electrical ratings table 1. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate-source voltage 14 v i d (1) 1. this value is limited by package drain current (continuous) at t c = 25c 80 a i d (2) 2. this value is rated according to rthj-case drain current (continuous) at t c = 100c 68 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 384 a p tot (2) total dissipation at t c = 25c 288 w dv/dt (4) 4. i sd < 80a, di/dt < 600a/s, v dd = 80%v (br)dss peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 175 c t j max. operating junction temperature 175 c table 2. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.52 c/w rthc-s case-to-sink typ 0.21 c/w rthj-amb thermal resistance junction-amb max 48 c/w table 3. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 40 a e as single pulse avalanche energy (starting tj=25c, id=iar, vdd=32v) 1374 mj e ar repetitive avalanche 53 mj
strh100n6fsy3 electrical characteristics 3/9 2 electrical characteristics (t case = 25c unless otherwise specified) 2.1 pre-irradiation table 4. on/off states symbol parameter test condictions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 14v 100 na bv dss drain-to-source breakdown voltage v gs = 0v, i d = 1ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1ma 24.5v r ds(on) static drain-source on resistance v gs = 12v i d = 40a 0.012 ? table 5. dynamic symbol parameter test condictions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v gs = 0v, v ds = 25v, f=1mhz 6800 1128 395 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 30v, i d = 40a, v gs =12v 178.5 32.6 53 nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 2 ? table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 30v, i d = 40a, r g = 4.7 ?, v gs = 12v 32 98 128 80 ns ns ns ns
electrical characteristics strh100n6fsy3 4/9 2.2 radiation characteristics (@tj=25c up to 100krad (a) ) table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd (1) i sdm (2) 1. this value is limited by package 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 80 380 a a v sd (3) 3. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 80a, v gs = 0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80a, di/dt = 100a/s v dd = 30v, tj = 25c 432 3.5 26 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80a, di/dt = 100a/s v dd = 30v, tj = 150c 528 4.9 30.8 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 8. on/off states symbol parameter test condictions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 14v 100 na bv dss drain-to-source breakdown voltage v gs = 0v, i d = 1ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1ma 24.5v r ds(on) static drain-source on resistance v gs = 12v i d = 40a 0.012 ? table 9. single event effect ion let (mev/(mg/cm2)) energy (mev) let range (m) v ds (v) @v gs =0 br 37 230 32 60
strh100n6fsy3 electrical characteristics 5/9 2.3 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. gate charge vs gate-source voltage figure 6. capacitance variations
electrical characteristics strh100n6fsy3 6/9 figure 7. normalized bv dss vs temperature figure 8. static drain-source on resistance figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. sorce drain-diode forward characteristics
strh100n6fsy3 package mechanical data 7/9 3 package mechanical data dim. mm. inch min. typ max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.80 d6.32 6.600.249 0.260 e 1.02 1.27 0.040 0.050 f 3.53 3.78 0.139 0.149 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.14 0.035 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.570 m 3.05 0.120 n0.710.025 r1 1.0 0.040 r2 1.65 0.065 to-254 mechanical data
revision history strh100n6fsy3 8/9 4 revision history table 10. revision history date revision changes 03-jul-2006 1 first release
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